Implications of gate tunneling and quantum effects on compact modeling in the gate-channel stack
نویسندگان
چکیده
Simulation and modeling of gate tunneling current for thin-oxide MOSFETs and Double-Gate SOIs are discussed. Guidelines for design of leaky MOS capacitors are proposed. Resonant gate tunneling current in DG SOI is simulated, based on quantum-mechanical models, and shown to be an issue of growing concern.
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